Accuracy of approximations in MOSFET charge models

Author

McAndrew, Colin C. ; Victory, James J.

Author_Institution

Motorola Inc., Tempe, AZ, USA

Volume

49

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

72

Lastpage

81

Abstract

This paper analyzes the results of common approximations made in MOSFET charge modeling. The basis for the comparison is a charge-sheet model that is valid in all regions of operation. We show that proper modeling of surface potential as a function of position along the channel is more important for capacitance coefficient modeling accuracy than partitioning of inversion charge between source and drain. In addition, we show that there is a numerical error in previous charge-sheet formulations, and provide a solution for this problem

Keywords

MOSFET; SPICE; capacitance; iterative methods; semiconductor device models; surface potential; MOSFET charge modeling; SPICE; approximations accuracy; capacitance coefficient modeling accuracy; charge-sheet model; gradual-channel approximation; iterative solution; numerical error; partitioning simplification; surface potential; Capacitance; Geometry; Integrated circuit modeling; MOS devices; MOSFET circuits; Permittivity; SPICE; Semiconductor device modeling; Solid modeling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974752

Filename

974752