A scalable meander-line resistor model for silicon RFICs

Author

Murji, Rizwan ; Deen, M. Jamal

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada

Volume

49

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

187

Lastpage

190

Abstract

A scalable lumped element model for meander-line resistors fabricated with the top-level metal of a silicon process that are suitable for radio frequency integrated circuit (RFIC) applications is presented. An optimization program is employed to extract the parameters of a physical equivalent circuit model. The simulated S-parameter data from the equivalent model shows very good agreement with the measured data

Keywords

S-parameters; UHF integrated circuits; elemental semiconductors; equivalent circuits; integrated circuit modelling; monolithic integrated circuits; optimisation; resistors; silicon; S-parameter data; Si; Si RFICs; Si process top-level metal; meander-line resistor model; monolithic resistors; optimization program; physical equivalent circuit model; radiofrequency IC applications; scalable lumped element model; Circuit simulation; Distributed parameter circuits; Equivalent circuits; Integrated circuit modeling; Integrated circuit technology; Microwave integrated circuits; Radio frequency; Radiofrequency integrated circuits; Resistors; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974769

Filename

974769