Equivalent cell approach for extraction of the SILC distribution in flash EEPROM cells

Author

Ielmini, Daniele ; Spinelli, Alessandro S. ; Lacaita, Andrea L. ; Modelli, Alberto

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

23

Issue

1

fYear

2002

Firstpage

40

Lastpage

42

Abstract

A new method for characterizing the distribution of the stress-induced leakage current (SILC) in flash memories is presented. The statistics of the leakage parameters are extracted directly from the time dependence of the threshold voltage distributions obtained in a single gate-stress experiment, without any need for tracking the behavior of the individual cells. The new technique can be used for fast evaluation and reliability projections, as well as providing a tool for statistical investigation on the oxide leakage mechanisms.

Keywords

flash memories; integrated circuit reliability; integrated memory circuits; leakage currents; statistical analysis; voltage distribution; SILC distribution; equivalent-cell technique; flash EEPROM cells; flash memories; leakage parameters; oxide leakage; reliability estimation; reliability statistical investigation; single gate-stress experiment; stress-induced leakage current; threshold voltage distributions; Data mining; Degradation; EPROM; Flash memory; Leakage current; Nonvolatile memory; Statistical distributions; Threshold voltage; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.974806

Filename

974806