Characterization of resonant tunneling diodes for microwave and millimeter-wave detection

Author

Mehdi, I. ; East, J.R. ; Haddad, G.I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

39

Issue

11

fYear

1991

fDate

11/1/1991 12:00:00 AM

Firstpage

1876

Lastpage

1880

Abstract

The authors report on the direct detection capabilities of resonant tunneling diodes in the 10-100 GHz range. An open circuit voltage sensitivity of 1750 mV/mW (in Ka-band) was measured. This is higher than the sensitivity of comparatively based commercially available solid-state detectors. The detector properties are a strong function of diode bias and the measured tangential signal sensitivity (-32 dBm at Ka-band with 1-MHz bandwidth) and the dynamic range (25 dB) of the diode are smaller compared to other solid-state detectors

Keywords

equivalent circuits; microwave detectors; resonant tunnelling devices; sensitivity analysis; tunnel diodes; 1 MHz; 10 to 100 GHz; EHF; Ka-band; MM-wave type; RTD; SHF; diode bias; direct detection capabilities; millimeter-wave detection; open circuit voltage sensitivity; resonant tunneling diodes; solid-state detectors; Detectors; Equivalent circuits; Etching; Inductance; Millimeter wave circuits; Resonant tunneling devices; Schottky diodes; Solid state circuits; Substrates; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.97489

Filename

97489