DocumentCode
1559212
Title
Pulsed laser sampling photon amplifier
Author
Chang, Sheldon S L
Author_Institution
Dept. of Electr. Eng., State Univ. of New York, Stony Brook, NY, USA
Volume
3
Issue
11
fYear
1991
Firstpage
988
Lastpage
989
Abstract
The performance of semiconductor laser amplifiers can be significantly improved by injecting carriers with pulsed electric currents of subnanosecond duration. Pulsed operation is illustrated in a Fabry-Perot amplifier and in a traveling-wave amplifier. The resonant amplifier is most sensitive to an input light wave at the instant the carrier density is crossing over the critical region, giving a sharply pulsed sampling effect on the input light wave signal. Compared to a resonant amplifier operating at subcritical electron density, the pulsed amplifier gives much higher gain and peak power. In fact, pulsed operation of a resonant amplifier is also expected to give significantly higher gain than and about the same peak output power as a traveling-wave amplifier. Pulsed operation also improves the performance of a traveling-wave amplifier by attenuating its internally reflected waves.<>
Keywords
laser theory; semiconductor junction lasers; Fabry-Perot amplifier; amplifier wave attenuation; carrier density; carrier injection; diode lasers; high amplifier gain; input light wave; internally reflected waves; laser sampling photon amplifier; peak output power; peak power; pulsed electric currents; pulsed operation; resonant amplifier; semiconductor laser amplifiers; sharply pulsed sampling effect; subnanosecond duration; traveling-wave amplifier; wave signal; Current; Fabry-Perot; High power amplifiers; Operational amplifiers; Optical pulses; Pulse amplifiers; Resonance; Sampling methods; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.97836
Filename
97836
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