The injection efficiency controlled IGBT

Author

Huang, S. ; Amaratunga, G.A.J. ; Udrea, F.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

23

Issue

2

fYear

2002

Firstpage

88

Lastpage

90

Abstract

An IGBT structure in which the anode injection efficiency changes with current density, the injection efficiency controlled IGBT (EEC-IGBT), is proposed. The anode injection efficiency of the IEC-IGBT is controlled via a current sensor inherent in its structure. Anode injection efficiency is strongly enhanced at low device current density and significantly reduced at high device current density. This enables the device to have a low on-state voltage drop (V/sub on/) and superior safe operation area (SOA), making it very suitable for high-power applications. Simulation results based on 3.3 KV DMOS NPT devices indicate the on-state voltage drop of the IEC-IGBT is reduced by 0.6 V (20%) and the short-circuit SOA (SCSOA) is improved by several times compared to the conventional IGBT.

Keywords

current density; equivalent circuits; insulated gate bipolar transistors; I-V characteristics; anode injection efficiency; current density; current sensor; equivalent circuit; half-cell structure; high-power applications; injection efficiency controlled IGBT; low on-state voltage drop; safe operation area; Anodes; Current density; Doping profiles; Electrons; Equivalent circuits; Insulated gate bipolar transistors; Low voltage; Semiconductor optical amplifiers; Signal processing; Switching circuits;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.981315

Filename

981315