Modeling high-energy heavy-ion damage in silicon

Author

Spratt, James P. ; Burke, Edward A. ; Pickel, James C. ; Leadon, Roland E.

Author_Institution

Full Circle Res. Inc., San Marcos, CA, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2136

Lastpage

2139

Abstract

We identify a discrepancy between experimental data and model predictions by a widely used radiation transport code, SRIM. We describe a method for determining the implant and damage profiles of energetic heavy ions that better agrees with experimental data than SRIM Monte Carlo predictions. Results of our method are given and compared to experimental data for a range of ion types and energies. Finally, the reason for discrepancy is discussed

Keywords

Gaussian distribution; Monte Carlo methods; elemental semiconductors; energy loss of particles; ion beam effects; ion implantation; radiation hardening (electronics); silicon; Gaussian function; Monte Carlo predictions; SRIM radiation transport code; Si; computer simulation; damage profiles; high-energy heavy ion damage; implant profiles; ion implantation; ion range; ion straggle; model predictions; projected range algorithm; Helium; Implants; Ion beams; Ion implantation; Monte Carlo methods; Particle accelerators; Predictive models; Radiation detectors; Silicon; Solid state circuits;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983185

Filename

983185