DocumentCode
1560756
Title
Materials for multi junction solar cell
Author
Nishimura, Suzuka ; Terashima, Kazutaka ; Nagayoshi, Hiroshi
Author_Institution
Keio Univ., Kanagawa, Japan
fYear
2005
Firstpage
725
Lastpage
727
Abstract
InGaN material systems have attracted much attention of the researchers for ultra high efficiency solar cells. We have studied to grow InGaN related materials on Si. GaN related materials have been found to be grown on Si substrates using electrically conductive BP crystals as a buffer crystal.
Keywords
III-V semiconductors; MOCVD; boron compounds; buffer layers; elemental semiconductors; gallium compounds; indium compounds; semiconductor growth; semiconductor heterojunctions; silicon; solar cells; vapour phase epitaxial growth; GaN-BP-Si; InGaN material system; Si; buffer crystal; electrically conductive BP crystals; multijunction solar cell; ultra high efficiency solar cells; Conducting materials; Crystalline materials; Crystals; Epitaxial growth; Gallium nitride; Lattices; Photonic band gap; Photovoltaic cells; Pollution measurement; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488234
Filename
1488234
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