1/f gate tunneling current noise model of ultrathin oxide MOSFETs

An analytical model for 1/f gate noise is developed and applied to the simulation of ultra-thin MOSFETs. The proposed model is based on oxide trapping mechanisms and uses surface potential modelling including quantum mechanical and gate polydepletion effects. The developed model reproduces experimental behaviors. Moreover, we have performed 1/f gate current noise for various drain voltage, and we show that there is no impact of the drain current noise on the gate current noise. Finally, we propose a compact model formulation for conventional circuit simulators.