A new structure of back contact solar cell improved by transistor effect

Author

Jimeno, J.C. ; Gutierrez, R. ; Hernando, F. ; Varner, K. ; Rodriguez, V. ; Uriarte, S. ; Ikaran, C. ; Petrina, I.

Author_Institution

Instituto de Tecnologia Microelectronica, Bilbao, Spain

fYear

2005

Firstpage

995

Lastpage

998

Abstract

This work presents a new structure of back contact solar cell. This structure, denominated transistor wrap through, TWT, collects the photogenerated current in their front surface, having a pn junction placed there. To transport this current to the back emitter TWT includes several localized bipolar transistors. An analytical model, including their electrical equivalent circuit has been developed. Manufacturing of TWT could be done by an industrial screen printing process, not being necessary the use of LASER or photolithography technologies.

Keywords

bipolar transistors; equivalent circuits; p-n junctions; semiconductor device models; solar cells; back contact solar cell; back emitter TWT; denominated transistor wrap through; electrical equivalent circuit; industrial screen printing process; localized bipolar transistors; photogenerated current; photolithography technologies; pn junction; Analytical models; Bipolar transistors; Contacts; Equivalent circuits; Laser modes; Manufacturing industries; Manufacturing processes; Photovoltaic cells; Printing; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488300

Filename

1488300