DocumentCode
1561302
Title
Large grain poly-Si thin films by metal induced crystallization of a-Si:H
Author
Albarghouti, Marwan A. ; Abu-Safe, Husam H. ; Naseem, Harneed A. ; Brown, William D. ; Al-Jassim, M.M. ; Jones, Kim M.
Author_Institution
Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA
fYear
2005
Firstpage
1070
Lastpage
1073
Abstract
Large grain poly-Si thin films on glass substrates have been successfully fabricated. The film thickness was 400 nm and the grains sizes were in excess of several microns. The films were fabricated using aluminum-induced crystallization of a-Si:H in the presence of a silicon oxide layer at the AI/a-Si:H interface. The a-Si:H film was deposited on glass substrates and the annealing temperatures and annealing times were kept below 450 °C and 30 minutes, respectively. The resulting poly-Si was heavily Al-doped.
Keywords
aluminium; annealing; crystallisation; elemental semiconductors; grain size; hydrogen; semiconductor thin films; silicon; Si:H,Al; aluminum-induced crystallization; annealing; film thickness; glass substrates; grains sizes; metal induced crystallization; polySi thin films; silicon oxide layer; Annealing; Artificial intelligence; Crystallization; Glass; Grain size; Semiconductor films; Silicon; Substrates; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488319
Filename
1488319
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