• DocumentCode
    1561658
  • Title

    Towards 400 mV ALICIA thin-film silicon solar cells on glass

  • Author

    Straub, A. ; Inns, D. ; Kunz, O. ; Terry, M.L. ; Widenborg, P.I. ; Sproul, A.B. ; Aberle, A.G.

  • Author_Institution
    Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, New South Wales Univ., Sydney, NSW, Australia
  • fYear
    2005
  • Firstpage
    1221
  • Lastpage
    1224
  • Abstract
    Polycrystalline silicon (pc-Si) is a promising candidate for thin-film photovoltaics. In this paper, the advantages, evolution of the technology, and the latest results of ALICIA pc-Si solar cells on glass are presented. ALICIA stands for aluminium-induced crystallisation ion-assisted deposition. In the ALICIA technology, a polycrystalline seed layer is formed on borosilicate glass by AIC (aluminium-induced crystallisation) and epitaxially thickened by non-ultra-high vacuum ion-assisted deposition (IAD). The key factors which led to the improvement of the open-circuit voltage from 130 mV in June 2003 to 386 mV in June 2004 are discussed. Furthermore, an ALICIA solar cell with a 1-Sun energy conversion efficiency of 2.2 % is presented. The short-circuit current density is 11.4 mA/cm2 and the Voc is 380 mV. These results were achieved by an optimisation of the temperature profile of the epitaxial growth process, by rapid thermal annealing (RTA), and by an increased hydrogenation temperature (∼480 °C). The presented results confirm that ALICIA is a very promising thin-film PV technology.
  • Keywords
    aluminium; crystallisation; current density; elemental semiconductors; ion beam assisted deposition; rapid thermal annealing; semiconductor growth; silicon; solar cells; thin film devices; 1-Sun energy conversion efficiency; 130 mV; 2.2 percent; 380 mV; 386 mV; 400 mV; ALICIA thin-film silicon solar cells; Si:Al; aluminium-induced crystallisation; aluminium-induced crystallisation ion-assisted deposition; borosilicate glass; epitaxial growth process; hydrogenation temperature; nonultra-high vacuum ion-assisted deposition; open-circuit voltage; polycrystalline seed layer; polycrystalline silicon; rapid thermal annealing; short-circuit current density; thin-film photovoltaics; Crystallization; Current density; Energy conversion; Glass; Photovoltaic cells; Semiconductor thin films; Silicon; Temperature; Vacuum technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488359
  • Filename
    1488359