DocumentCode
1561658
Title
Towards 400 mV ALICIA thin-film silicon solar cells on glass
Author
Straub, A. ; Inns, D. ; Kunz, O. ; Terry, M.L. ; Widenborg, P.I. ; Sproul, A.B. ; Aberle, A.G.
Author_Institution
Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, New South Wales Univ., Sydney, NSW, Australia
fYear
2005
Firstpage
1221
Lastpage
1224
Abstract
Polycrystalline silicon (pc-Si) is a promising candidate for thin-film photovoltaics. In this paper, the advantages, evolution of the technology, and the latest results of ALICIA pc-Si solar cells on glass are presented. ALICIA stands for aluminium-induced crystallisation ion-assisted deposition. In the ALICIA technology, a polycrystalline seed layer is formed on borosilicate glass by AIC (aluminium-induced crystallisation) and epitaxially thickened by non-ultra-high vacuum ion-assisted deposition (IAD). The key factors which led to the improvement of the open-circuit voltage from 130 mV in June 2003 to 386 mV in June 2004 are discussed. Furthermore, an ALICIA solar cell with a 1-Sun energy conversion efficiency of 2.2 % is presented. The short-circuit current density is 11.4 mA/cm2 and the Voc is 380 mV. These results were achieved by an optimisation of the temperature profile of the epitaxial growth process, by rapid thermal annealing (RTA), and by an increased hydrogenation temperature (∼480 °C). The presented results confirm that ALICIA is a very promising thin-film PV technology.
Keywords
aluminium; crystallisation; current density; elemental semiconductors; ion beam assisted deposition; rapid thermal annealing; semiconductor growth; silicon; solar cells; thin film devices; 1-Sun energy conversion efficiency; 130 mV; 2.2 percent; 380 mV; 386 mV; 400 mV; ALICIA thin-film silicon solar cells; Si:Al; aluminium-induced crystallisation; aluminium-induced crystallisation ion-assisted deposition; borosilicate glass; epitaxial growth process; hydrogenation temperature; nonultra-high vacuum ion-assisted deposition; open-circuit voltage; polycrystalline seed layer; polycrystalline silicon; rapid thermal annealing; short-circuit current density; thin-film photovoltaics; Crystallization; Current density; Energy conversion; Glass; Photovoltaic cells; Semiconductor thin films; Silicon; Temperature; Vacuum technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488359
Filename
1488359
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