Double layer anti-reflective coatings for silicon solar cells

Author

Wright, Daniel N. ; Marstein, Erik S. ; Holt, Awe

Author_Institution

Sect. for Renewable Energy, Inst. for Energiteknikk, Kjeller, Norway

fYear

2005

Firstpage

1237

Lastpage

1240

Abstract

In this paper simulated single and double layer anti-reflective coatings based on the refractive index limits of silicon nitride (SiN) and silicon oxide (SiO₂) are presented. The best structure combines SiN and SiO₂, resulting in a reflectance of 0.044 based on the AM1.5 photon flux from 300-1150 nm. PC1D solar cell simulations show that an increase in short circuit current density of 6.4% was possible by replacing an optimised single SiN layer with the above mentioned double layer.

Keywords

antireflection coatings; current density; elemental semiconductors; reflectivity; refractive index; silicon; silicon compounds; solar cells; 300 to 1150 nm; PC1D solar cell simulations; Si; SiN; SiO₂; double layer anti-reflective coatings; photon flux; reflectance; refractive index; short circuit current density; silicon nitride; silicon oxide; silicon solar cells; Chemicals; Circuit simulation; Coatings; Optical reflection; Photovoltaic cells; Reflectivity; Refractive index; Short circuit currents; Silicon compounds; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488363

Filename

1488363