pH-sensitive ISFETs based on titanium nitride and their application to battery monitor

Author

Wakida, S. ; Mochiziuki, S. ; Makabe, R. ; Kawahara, A. ; Yamane, M. ; Takasuka, S. ; Higashi, K.

Author_Institution

Gov. Ind. Res. Inst., Japan

fYear

1991

Firstpage

222

Lastpage

224

Abstract

A novel pH-sensitive ISFET (ion-sensitive field effect transistor) based on titanium nitride (TiN), which is an electron conducting material, was fabricated by a plasma-enhanced chemical vapor deposition, (CVD) method. The TiN ISFETs showed a linear response from pH 1.68 to 10.01 of standard pH solutions with 59 mV per decade change. The TiN ISFETs had no alkaline error from pH 1.68 to 10.01. Since TiN films have superior mechanical and chemical characteristics in the strongly acidic region, the basic application to a lead battery monitor was investigated. The TiN ISFETs showed a fairly linear correlation with the specific gravity of electrolytic solution in a battery.<>

Keywords

battery testers; electric sensing devices; electrochemical analysis; insulated gate field effect transistors; pH measurement; plasma CVD; titanium compounds; TiN/int; battery monitor; electrolytic solution; linear correlation; pH-sensitive ISFET; plasma-enhanced chemical vapor deposition; specific gravity; Batteries; Chemical vapor deposition; Conducting materials; Electrons; FETs; Plasma applications; Plasma chemistry; Plasma properties; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.148842

Filename

148842