Modeling of triple junction a-Si solar cells using ASA: analysis of device performance under various failure scenarios

Author

Das, Chandan ; Du, Wenhui ; Deng, Xunming

Author_Institution

Dept. of Phys. & Astron., Toledo Univ., OH, USA

fYear

2005

Firstpage

1480

Lastpage

1483

Abstract

Triple junction a-Si solar cells have been modeled and simulated using the Advanced Semiconductor Analysis (ASA). The device performance is analyzed with numerically simulated I-V characteristics. We have studied several failure scenarios such as variations in the thickness of different layers of the multilayered triple-junction structure. Distinctive features of the I-V characteristics and solar parameters have been found which have been correlated with experimentally obtained results.

Keywords

Ge-Si alloys; amorphous semiconductors; elemental semiconductors; failure analysis; semiconductor device models; semiconductor junctions; silicon; solar cells; Advanced Semiconductor Analysis; I-V characteristics; Si-SiGe-SiGe; device performance; failure scenarios; multilayered triple-junction structure; triple junction solar cells; Analytical models; Fabrication; Failure analysis; Manufacturing; Numerical simulation; Performance analysis; Photovoltaic cells; Poisson equations; Production; Semiconductor thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488422

Filename

1488422