Characteristics and analysis of a-Si:H color-sensitive photodetectors

Author

Jyh-Wong Hong ; Nerng-Fu Shin ; Yean-Fen Wu ; Tean-Sen Jen ; Chun-Yen Chang

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan

fYear

1991

Firstpage

279

Lastpage

281

Abstract

A novel a-Si:H photodetector has been demonstrated. The advantages of this photodetector include a voltage-adjustable sensitive-wavelength range, which has been confirmed by simulation results, and a lower sub-peak spectral response. The performances of the successfully fabricated a-Si:H color-sensitive photodetectors, processing a minimum FWHM (full width at half maximum) of 600 AA in its spectral responses and with the basic structure of Al/n/sup +/-i-p/sup +/-i-n-i-p-i-n/sup +//ITO(indium tin oxide)/glass, have been quantitatively fitted by the theoretical analysis. The simple model presented can be used to explain the color-sensitive features observed experimentally for the proposed photodetectors.<>

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; photodetectors; silicon; Si:H-ITO; Si:H-InSnO; amorphous Si:H photodetector; color-sensitive photodetectors; elemental semiconductor; minimum FWHM; model; performances; voltage-adjustable sensitive-wavelength range; Charge carrier processes; Chemicals; Cleaning; Fabrication; Glass; Indium tin oxide; Photodetectors; Plasma chemistry; Plasma devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.148861

Filename

148861