Challenges in 65nm Poly, RX and STI Defect Learning

Author

Yu, Chienfan ; Ayala, Javier ; Tran, Cung ; Gay, James ; Santiago, Anthony ; Meyette, Eric ; Hampton, Elizabeth ; Oakley, Garrett ; Bandy, Kenneth ; McCormack, Timothy ; Venigalla, Rajasekhar ; Scholl, Frederick

Author_Institution

IBM Syst. & Technol. Group, Hopewell Junction, NY

fYear

2008

Firstpage

6

Lastpage

10

Abstract

During manufacturing transitioning from 90 nm to 65 nm node in IBM´s 300 mm fab, FEOL (front end of line) defect pareto shifted as a result of the changes in integration scheme. By combining the optically based in-line inspection and electrical kerf test, key yield detractors were identified and addressed. Not all optically detected defects are true killers. Wafer functional test and physical failure analysis provided the ultimate determination for the significance of detractors.

Keywords

inspection; masks; semiconductor device manufacture; RX; STI defect learning; electrical kerf test; front end of line defect pareto; integration scheme; key yield detractors; micromasking; optical in-line inspection; Cities and towns; Hardware; Inspection; Manufacturing processes; Resists; Semiconductor device manufacture; Silicidation; Silicon; Strips; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI

Conference_Location

Cambridge, MA

ISSN

1078-8743

Print_ISBN

978-1-4244-1964-7

Electronic_ISBN

1078-8743

Type

conf

DOI

10.1109/ASMC.2008.4528997

Filename

4528997