Patterning magnetic antidot-type arrays by Ga/sup +/ implantation

Summary form only given. By defining a periodic array of square holes into a continuous ferromagnetic film an antidot array is formed. In this way the magnetisation reversal process and domain structure can be significantly changed. In these structures isolated domain states that could represent recorded bits have been observed at remanence trapped above and below antidots during hard axis magnetisation reversal. Milling holes using a focused ion beam (FIB) system is slow and reduces the integrity of the films. Here an alternative means to fabricate an antidot array by changing the magnetic properties of thin film NiFe through Ga/sup +/ implantation is outlined.