Multiparameter diagnostic of semiconductor layers by use of microwave waveguide photonic crystals

Author

Usanov, D.A. ; Skripal, A.V. ; Ponomarev, Denis V. ; Latysheva, E.V.

Author_Institution

Saratov State Univ. named after N.G. Chernyshevsky, Saratov, Russia

fYear

2014

fDate

7-13 Sept. 2014

Firstpage

906

Lastpage

907

Abstract

The possibility to simultaneously determine the thickness and the electrical conductivity of a thin semiconductor layer and the mobility of its free charge carriers using a one-dimensional microwave photonic crystal has been shown. The semiconductor layer plays a role of the irregularity in the one-dimensional waveguide photonic crystals. The results of the determination of a highly doped semiconductor´s epitaxial layer parameters by the inverse problem solving using reflection and transmission spectra in a microwave band are presented.

Keywords

carrier mobility; electrical conductivity; electrical conductivity measurement; electromagnetic wave reflection; electromagnetic wave transmission; microwave measurement; microwave spectra; photonic crystals; thickness measurement; waveguides; electrical conductivity; free charge carrier mobility; highly doped semiconductor epitaxial layer parameters; inverse problem solving; microwave band; microwave waveguide photonic crystals; multiparameter diagnostic; one dimensional microwave photonic crystal; reflection spectra; thin semiconductor layer thickness; transmission spectra; Crystals; Epitaxial growth; Microwave FET integrated circuits; Microwave integrated circuits; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-412-5

Type

conf

DOI

10.1109/CRMICO.2014.6959687

Filename

6959687