DocumentCode
1566257
Title
Performance analysis of beyond 100 Gbits/in/sup 2/ MFM-based MEMS-actuated mass storage devices
Author
El-Sayed, R.T. ; Carley, L.R.
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2002
Abstract
Summary form only given. In this research, MEMS-positioned nonvolatile rewritable mass storage devices with permanent magnetic read/write head have been extensively modeled and optimized. The simulation environment and performance analysis are discussed.
Keywords
intersymbol interference; magnetic storage; microactuators; performance evaluation; simulation; ISI; MEMS actuated head positioning; MEMS-positioned storage devices; dynamic simulations; inter-symbol interference; inter-track interference; nonvolatile rewritable mass storage devices; performance analysis; performance optimisation; permanent magnetic read/write head; simulation environment; thermal decay; tip geometry; tip trajectory; Atomic force microscopy; Magnetic anisotropy; Magnetic force microscopy; Magnetic multilayers; Micromechanical devices; Performance analysis; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Saturation magnetization; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
0-7803-7365-0
Type
conf
DOI
10.1109/INTMAG.2002.1000888
Filename
1000888
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