• DocumentCode
    1566762
  • Title

    The FMR behavior of Fe single layer

  • Author

    Yu, Clare C. ; Chen, M. ; Chiu, P.S. ; Hung, D.S. ; Liou, Yi-Shing ; Lee, S.F. ; Tsai, C.S. ; Yao, Y.D.

  • Author_Institution
    Inst. of Phys., Acad. Sinica, Taipei, Taiwan
  • fYear
    2002
  • Abstract
    Summary form only given. GaAs(001)/ Fe 40nm/ Ag 2nm epitaxial films were fabricated by MBE technique. The main epitaxial relationship is GaAs(001)[110]/Fe(001)[110]/Ag(001)[100] for the deposition temperature of iron, Tg ⩾ 100°C. From the study of longitudinal magneto-optical Kerr effect, we observed two-step magnetic switching behavior along Fe[l10] and [1-10]. This indicates that these films have a strong crystalline induced biaxial magnetic anisotropy. Interestingly, for Tg ⩽ 1OO°C, the images of atomic force microscopy show that there are many surface defects with height~ lOnm and lateral dimension~ l0Onm on the film surface, as shown in Fig. 1, and the defect density drops rapidly while increasing the Tg. For example, the defect density for Tg= 50°C, 100°C and 200°C is 37, 18 and 0 per μm2.
  • Keywords
    Kerr magneto-optical effect; atomic force microscopy; ferromagnetic materials; ferromagnetic resonance; iron; magnetic anisotropy; magnetic epitaxial layers; magnetic switching; molecular beam epitaxial growth; surface morphology; surface topography; 10 nm; 100 degC; 100 nm; 200 degC; 50 degC; FMR behavior; Fe; Fe single layer; GaAs; MBE; atomic force microscopy; defect density; longitudinal magneto-optical Kerr effect; strong crystalline induced biaxial magnetic anisotropy; surface defects; two-step magnetic switching behavior; Atomic force microscopy; Electromagnetic wave absorption; Iron; Magnetic anisotropy; Magnetic films; Magnetic resonance; Magnetic switching; Microwave devices; Microwave theory and techniques; Perpendicular magnetic anisotropy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
  • Conference_Location
    Amsterdam, The Netherlands
  • Print_ISBN
    0-7803-7365-0
  • Type

    conf

  • DOI
    10.1109/INTMAG.2002.1000933
  • Filename
    1000933