ZnO:Al based transparent thin film transistors

In this work, the transparent thin film transistors (TTFTs) with slightly Al-doped ZnO films as the channel layers were fabricated by a magnetron radio frequency co-sputtering system. The performances of the TTFTs with various thicknesses of the channel layers were characterized. When the thickness of the channel layer was 25 nm, the field-effect carrier mobility and the on/off current ratio of the TTFTs were as high as 32.5 cm²/V-s and 10⁷, respectively. The DC characteristics of the ZnO:Al based TTFTs at different temperatures were also measured, showing a reasonable thermal stability.