• DocumentCode
    1568152
  • Title

    A 10.8-mW low-noise amplifier in 0.35-μm SiGe BiCMOS for UWB wireless receivers

  • Author

    Tsai, Ming-Da ; Lin, Chin-Shen ; Lin, Kun-You ; Wang, Huei

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2006
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    A UWB low-power and low-noise amplifier is proposed. The UWB LNA achieves better than 14.5-dB gain with 10.8-mW power consumption. The measured minimum noise figure is 3.1 dB and lower than 5.4 dB in the desired band. This MMIC is implemented in a commercial 0.35-μm SiGe BiCMOS technology and occupies total chip size of only 0.74 mm2 including all testing pads.
  • Keywords
    BiCMOS integrated circuits; MMIC amplifiers; germanium; low noise amplifiers; radio receivers; semiconductor materials; silicon; ultra wideband communication; 0.35 mum; 10.8 mW; MMIC; SiGe; SiGe BiCMOS; UWB wireless receivers; low-noise amplifier; low-power amplifier; BiCMOS integrated circuits; Energy consumption; Germanium silicon alloys; Low-noise amplifiers; MMICs; Noise figure; Noise measurement; Semiconductor device measurement; Silicon germanium; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Symposium, 2006 IEEE
  • Print_ISBN
    0-7803-9412-7
  • Type

    conf

  • DOI
    10.1109/RWS.2006.1615089
  • Filename
    1615089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1568152