DocumentCode
1568351
Title
Radiation Characterization of 512Mb SDRAMs
Author
Lawrence, Reed K.
Author_Institution
BAE Syst., Manassas
Volume
0
fYear
2007
Firstpage
204
Lastpage
207
Abstract
Two single data-rate 512 Mb SDRAMs have been radiation characterized. The SDRAMs were not from the same manufacturer. The results of total ionizing dose, single event latchup and single event upset are presented. Radiation results show similarities in total ionizing dose level, but demonstrate different modes of failure. One SDRAM experienced single event latchup; whereas the other did not, and for this SDRAM, single event upset with heavy ion and proton testing yielded useable results.
Keywords
DRAM chips; SRAM chips; aerospace testing; integrated circuit testing; proton effects; SDRAM test; ionizing dose level; proton testing; radiation characterization; single event latchup sensitivity; single event upset; space environment usage; synchronous dynamic random access memories; total ionizing dose level; Ionizing radiation; Logic; Plastic packaging; Random access memory; SDRAM; Single event upset; Space technology; Temperature; Testing; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-1464-2
Type
conf
DOI
10.1109/REDW.2007.4342566
Filename
4342566
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