• DocumentCode
    1568401
  • Title

    TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory

  • Author

    Oldham, Timothy R. ; Friendlich, Mark ; Howard, James W., Jr. ; Berg, Melanie D. ; Kim, Hak S. ; Irwin, Timithy L. ; LaBel, Kenneth A.

  • Author_Institution
    NASA, Greenbelt
  • Volume
    0
  • fYear
    2007
  • Firstpage
    221
  • Lastpage
    225
  • Abstract
    Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiCh), with a tractable soft error rate of about 10-12 errors/bit-day, for the Adams ten percent worst case environment.
  • Keywords
    NAND circuits; flash memories; ion beam effects; nanoelectronics; Samsung NAND flash memory; fabrication technology; nonvolatile memory; radiation effects; single event effects; single event heavy ion test; size 63 nm; total ionizing dose; tractable soft error rate; unhardened flash memory; Consumer electronics; Flash memory; Manufacturing; NASA; Nonvolatile memory; Power supplies; Radiation effects; Space technology; Testing; USA Councils; NAND flash; nonvolatile memory; radiation effects; single event effects (SEE); total ionizing dose (TID);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2007 IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1464-2
  • Type

    conf

  • DOI
    10.1109/REDW.2007.4342570
  • Filename
    4342570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1568401