A novel magnetotransistor based on the drift current in the emitter

The magnetotransistor utilizes the emitter injection modulation due to the induced Hall field in the emitter. It is found that in the general structure the induced Hall field mainly results from the diffusion carrier transport, whose effect is quite small, rather than the drift carrier transport. In order to increase the drift carrier transport and hence lead to the enhancement of the induced Hall field, a novel magnetotransistor structure has been designed which has the lateral drift of carriers in the emitter independent of the carrier injection into the base. The new device is designed to have as high a sensitivity as possible, and the analysis shows that the sensitivity of the magnetotransistor can be enhanced significantly.<>