• DocumentCode
    1569216
  • Title

    InP-based single photon avalanche diodes

  • Author

    Itzler, Mark A. ; Jiang, Xudong ; Nyman, Bruce ; Ben-Michael, Rafael ; Slomkowski, Krystyna

  • Author_Institution
    Princeton Lightwave Inc., Princeton, NJ
  • fYear
    2008
  • Firstpage
    226
  • Lastpage
    227
  • Abstract
    We describe recent results for the performance and modeling of InP-based single photon avalanche diodes. At 1.55 mum, dark count probabilities < 2 times 10-7 ns-1 have been achieved at 220 K for a photon detection efficiency of 15%.
  • Keywords
    III-V semiconductors; avalanche photodiodes; indium compounds; InP; dark count probabilities; photon detection efficiency; single photon avalanche diodes; temperature 220 K; wavelength 1.55 mum; Absorption; Circuits; Costs; Cryptography; Diodes; Indium phosphide; Infrared detectors; Optical fibers; Photonics; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688571
  • Filename
    4688571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1569216