DocumentCode
1569442
Title
A 60GHz direct-conversion transmitter in 65nm CMOS technology
Author
Takayama, Naoki ; Matsushita, Kouta ; Ito, Shogo ; Li, Ning ; Okada, Kenichi ; Matsuzawa, Akira
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2010
Firstpage
363
Lastpage
364
Abstract
This paper presents a 60 GHz direct-conversion transmitter in 65 nm CMOS technology. The power amplifier consists of 4-stage transistors. The circuit model of de-coupling capacitor is built as a transmission line to consider the physical length. In the measurement results, the conversion gain is above 9.6 dB at 58-65 GHz band, and the 1 dB compression point is 1.6 dBm with 60 GHz LO frequency and 1 dB LO power.
Keywords
CMOS analogue integrated circuits; field effect MIMIC; millimetre wave power amplifiers; transmitters; 4-stage transistors; CMOS technology; bandwidth 58 GHz to 65 GHz; decoupling capacitor; direct conversion transmitter; power amplifier; CMOS technology; Capacitors; Distributed parameter circuits; Frequency measurement; Power amplifiers; Power measurement; Power transmission lines; Semiconductor device modeling; Transmission line measurements; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (ASP-DAC), 2010 15th Asia and South Pacific
Conference_Location
Taipei
Print_ISBN
978-1-4244-5765-6
Electronic_ISBN
978-1-4244-5767-0
Type
conf
DOI
10.1109/ASPDAC.2010.5419862
Filename
5419862
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