A high-speed current mode sense amplifier for Spin-Torque Transfer Magnetic Random Access Memory

Author

Cheng, Chia-Tsung ; Tsai, Yu-Chang ; Cheng, Kuo-Hsing

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2010

Firstpage

181

Lastpage

184

Abstract

A high-speed current mode sense amplifier for Spin Torque Transfer Magnetic Random Access Memory (STT MRAM) is proposed. The sense amplifier is designed in a 0.18 μm CMOS technology, and 1.8 V supply voltage. The resistance values of high state is 2132 Ω, low state is 1215 Ω, and reference state is 1512 Ω, respectively. The proposed sense amplifier decreases the dropping rate of input bias. In particular, it can reduce the sensing time and the power-delay-product (PDP). In addition, the proposed sense amplifier has higher driving ability.

Keywords

CMOS integrated circuits; MRAM devices; amplifiers; CMOS technology; STT MRAM; high-speed current mode sense amplifier; power-delay-product; resistance 1215 ohm; resistance 1512 ohm; resistance 2132 ohm; size 0.18 micron; spin-torque transfer magnetic random access memory; voltage 1.8 V; CMOS technology; Delay effects; Electric resistance; Equivalent circuits; Impedance; Random access memory; Resistors; Torque; Voltage; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on

Conference_Location

Seattle, WA

ISSN

1548-3746

Print_ISBN

978-1-4244-7771-5

Type

conf

DOI

10.1109/MWSCAS.2010.5548588

Filename

5548588