DocumentCode
1569804
Title
InAs electron avalanche photodiodes with single carrier type multiplication and extremely low excess noise
Author
Marshall, A.R.J. ; Tan, C.H. ; Steer, M.J. ; David, J.P.R.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield
fYear
2008
Firstpage
296
Lastpage
297
Abstract
This paper reports a comprehensive study of impact ionization in InAs avalanche photodiodes (APDs), indicating for the first time that InAs may offer a III-V alternative to the CdHgTe electron APD (EAPD).
Keywords
III-V semiconductors; avalanche breakdown; avalanche photodiodes; charge injection; impact ionisation; indium compounds; p-i-n photodiodes; semiconductor device noise; InAs; electron avalanche photodiodes; extremely low excess noise; impact ionization; n-i-p diodes; p-i-n diodes; photomultiplication measurements; pure electron injection; single carrier type multiplication; Avalanche photodiodes; Charge carrier processes; Electrons; III-V semiconductor materials; Impact ionization; Noise measurement; P-i-n diodes; PIN photodiodes; Photoconductivity; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688607
Filename
4688607
Link To Document