A 5 kV HBM transformer-based ESD protected 5-6 GHz LNA

Author

Borremans, J. ; Thijs, S. ; Wambacq, P. ; Linten, D. ; Rolain, Y. ; Kuijk, M.

Author_Institution

Vrije Univ. Brussel, Brussels

fYear

2007

Firstpage

100

Lastpage

101

Abstract

Integrated designs in deep-submicron CMOS require ESD protection for their I/O pins. Since CMOS scaling drastically lowers the breakdown voltage of a MOS transistor, the available design window for ESD protection is narrowing. An inductor-based ESD protection offers superb protection but is severely area consuming. In this paper we propose a transformer-based ESD protection for inductor-based LNAs. We demonstrate that the proposed technique offers excellent ESD protection and RF performance without the loss of area.

Keywords

CMOS integrated circuits; MMIC amplifiers; electrostatic discharge; inductors; integrated circuit design; low noise amplifiers; transformers; HBM transformer-based ESD protection; I/O pins; MOS transistor; RF performance; breakdown voltage; deep-submicron CMOS; frequency 5 GHz to 6 GHz; inductor-based ESD protection; voltage 5 kV; Breakdown voltage; Circuit noise; Circuit synthesis; Diodes; Electrostatic discharge; Inductors; Noise reduction; Protection; Radio frequency; Signal to noise ratio; CMOS; ESD protection; LNA; low area; transformer;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-05-5

Electronic_ISBN

978-4-900784-05-5

Type

conf

DOI

10.1109/VLSIC.2007.4342677

Filename

4342677