A 18GHz to 27 GHz low noise amplifier with improved TSMC inductor module

Author

Sun, Pou-Tou ; Hsiao, Yu-Hsuan ; Chan, Ssu-Chieh ; Chuang, Ying-jui

Author_Institution

Dept. of Commun. Eng., Feng-Chia Univ., Taichung, Taiwan

Volume

1

fYear

2011

Firstpage

644

Lastpage

647

Abstract

This paper presents a wideband low noise amplifier by using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 um CMOS process for K-Band application. We use active diode to improve linearity, and improve TSMC inductor module by advanced design system momentum. The measurement results show that the input return loss is less than -8 dB, output return loss is less than -13.4 dB, the gain is 4.8 dB, the minimum noise figure is 4.1 dB, and the power consumption is 16.4 mW. The die area including pads is 0.75 mm².

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; inductors; integrated circuit design; low noise amplifiers; wideband amplifiers; K-Band application; TSMC CMOS process; Taiwan Semiconductor Manufacturing Company; active diode; advanced design system momentum; frequency 18 GHz to 27 GHz; gain 4.8 dB; improved TSMC inductor module; noise figure 4.1 dB; power 16.4 mW; size 0.18 mum; wideband low noise amplifier; CMOS integrated circuits; CMOS technology; Inductors; Radio frequency; Semiconductor device measurement; Low Noise Amplifier; TSMC 0.18 um Process;

fLanguage

English

Publisher

ieee

Conference_Titel

Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC), 2011

Conference_Location

Harbin

Print_ISBN

978-1-4244-9792-8

Type

conf

DOI

10.1109/CSQRWC.2011.6037033

Filename

6037033