The design of dual-band CMOS low noise amplifier for wireless applications

Author

Zhiqiang, Gao ; Dawei, Liu ; Shiqing, He ; Haisheng, Han ; Zhongzhao, Zhang

Author_Institution

Dept. of Microelectron., Harbin Inst. of Technol., Harbin, China

Volume

1

fYear

2011

Firstpage

675

Lastpage

678

Abstract

In this paper, a concurrent dual-band design of low noise amplifier, which could work with 3G-Exband 2.6GHz and WLAN 5.2GHz bands is presented using 0.18μm CMOS technology. The topology of the inductance degenerated cascode structure based on power-constrained simultaneous noise and input matching (PCSNIM) technique is presented. The simulated results of the circuit show that the optimized Noise Figure is about 0.65dB and 0.78dB, the input return loss S11 is about -20dB and -22dB, and power gain S21 is about 15dB and 9.5dB at the bands of 2.6GHz and 5.2GHz, respectively. The circuit dissipation of DC power is only 3.6mW under a supply 1.8V.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; field effect MMIC; low noise amplifiers; 3G-Exband; CMOS technology; PCSNIM technique; WLAN bands; dual-band CMOS low noise amplifier design; frequency 2.6 GHz; frequency 5.2 GHz; inductance degenerated cascode structure; power-constrained simultaneous noise and input matching technique; size 0.18 mum; voltage 1.8 V; Conferences; Wireless LAN; Dual-band concurrent LNA; Matching; Noise Figure; PCSNIM;

fLanguage

English

Publisher

ieee

Conference_Titel

Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC), 2011

Conference_Location

Harbin

Print_ISBN

978-1-4244-9792-8

Type

conf

DOI

10.1109/CSQRWC.2011.6037042

Filename

6037042