A 63-GHz voltage-controlled oscillator in 0.18-μm CMOS

Author

Hsieh, Hsieh-Hung ; Lu, Liang-Hung

Author_Institution

Nat. Taiwan Univ., Taipei

fYear

2007

Firstpage

178

Lastpage

179

Abstract

A novel circuit topology for the millimeter-wave voltage-controlled oscillators (VCOs) is presented. By employing the admittance-transforming technique, the proposed circuit can sustain fundamental oscillation close to the cut-off frequency of the transistors. Utilizing a standard 0.18-mum CMOS process, a V-band VCO is implemented for demonstration. The fabricated circuit exhibits a frequency tuning range of 670 MHz in the vicinity of 63 GHz. The measured output power and phase noise at 1-MHz offset are -15 dBm and -89 dBc/Hz, respectively. Operated at a 1.8-V supply voltage, the total dc current consumption of the VCO and the output buffers is 55 mA.

Keywords

CMOS integrated circuits; field effect MIMIC; millimetre wave oscillators; phase noise; voltage-controlled oscillators; CMOS; V-band VCO implementation; admittance-transforming technique; circuit topology; current 55 mA; dc current consumption; frequency 63 GHz; frequency tuning range; millimeter-wave voltage-controlled oscillators; phase noise; size 0.18 mum; transistors cut-off frequency; voltage 1.8 V; CMOS process; Circuit optimization; Circuit topology; Cutoff frequency; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Noise measurement; Power measurement; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-04-8

Electronic_ISBN

978-4-900784-05-5

Type

conf

DOI

10.1109/VLSIC.2007.4342705

Filename

4342705