DocumentCode
1570994
Title
GaN diode-pumping of a red semiconductor disk laser
Author
Smith, Antony ; Hastie, Jennifer E. ; Kemp, Alan J. ; Foreman, Hannah D. ; Dawson, Martin D. ; Leinonen, Tomi ; Guina, Mircea
Author_Institution
Inst. of Photonics, Univ. of Strathclyde, Glasgow
fYear
2008
Firstpage
404
Lastpage
405
Abstract
We report a 672 nm semiconductor-disk-laser pumped directly by gallium nitride laser diodes. Continuous wave output in a single transverse mode, tuneable over 16 nm and with maximum power of 17 mW, was achieved around room temperature.
Keywords
III-V semiconductors; gallium compounds; microdisc lasers; optical pumping; semiconductor lasers; wide band gap semiconductors; GaN; continuous wave output; power 17 mW; red semiconductor disk laser diode pumping; single transverse mode; temperature 293 K to 298 K; wavelength 672 nm; Diode lasers; Gallium nitride; III-V semiconductor materials; Laser excitation; Laser modes; Laser tuning; Pump lasers; Semiconductor diodes; Semiconductor lasers; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688661
Filename
4688661
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