Magnetization reversal of deep submicron magnetic elements

Summary form only given. Magnetic films patterned into deep submicron scale are of great interest with future high density storage and memory devices. These applications require the magnetic behavior, especially switching field, of submicron elements to be well defined. We have calculated the switching field behavior and remanent magnetization configuration for single films and synthetic antiferromagnets (ferromagnet/nonmagnet/ferromagnet:SyAF). In this work, experimental study was carried out using Ni/sub 80/Fe/sub 20/ films. We will present these results in conjunction with the results of the micromagnetic simulation and demonstrate the advantage of the SyAF.