DocumentCode
1572289
Title
Realization of extended ultrabroadband quantum-dash laser emission using postgrowth intermixing
Author
Tan, C.L. ; Djie, H.S. ; Dimas, C.E. ; Hongpinyo, V. ; Ding, Y.H. ; Ooi, B.S.
Author_Institution
Center for Opt. Technol. & Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2008
Firstpage
529
Lastpage
530
Abstract
We demonstrate a widened ultrabroad-stimulated emission in InAs/InAlGaAs quantum-dash laser using the postgrowth lattice-intermixing technique. The 100 nm wavelength blue-shifted device exhibits larger lasing bandwidth (~41 nm) than as-grown laser (~25 nm) with a spectral ripple of <1 dB.
Keywords
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; indium compounds; quantum dot lasers; stimulated emission; InAs-InAlGaAs; extended ultrabroadband quantum-dash laser emission; postgrowth lattice-intermixing technique; widened ultrabroad-stimulated emission; Biomedical optical imaging; Chemical lasers; Laser tuning; Optical pumping; Optical sensors; Photonic band gap; Quantum dot lasers; Quantum well lasers; Spectroscopy; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688725
Filename
4688725
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