A CMOS 5-GHz micro-power LNA

Author

Hsieh, Hsieh-Hung ; Lu, Liang-Hung

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2005

Firstpage

31

Lastpage

34

Abstract

A fully integrated LNA suitable for ultra-low-voltage and ultra-low-power applications is designed and fabricated in a standard 0.18-μm CMOS technology. With complementary current-reused gain stages, the proposed amplifier exhibits 9.2-dB small-signal gain and 4.5-dB noise figure at 5 GHz while consuming 900- μW DC power from an extremely low supply voltage of 0.6 V. A gain/power quotient, which is widely used as the figure of merit for low-power amplifiers, of 10.2 dB/mW is achieved in this work.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; integrated circuit design; integrated circuit noise; low-power electronics; 0.18 micron; 0.6 V; 4.5 dB; 5 GHz; 9.2 dB; 900 muW; CMOS design; CMOS micro-power LNA; amplifier; complementary current-reused gain stages; figure of merit; fully integrated LNA; gain/power quotient; low-power amplifiers; noise figure; small-signal gain; supply voltage; ultra-low-power applications; ultra-low-voltage applications; CMOS technology; Circuit topology; Energy consumption; Low-noise amplifiers; MOSFETs; Noise figure; Radio frequency; Radiofrequency amplifiers; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489202

Filename

1489202