• DocumentCode
    1572931
  • Title

    Saturation of intersubband absorption in GaN/AlN-based waveguide integrated with spot-size converter

  • Author

    Iizuka, Norio ; Yoshida, Haruhiko ; Managaki, Nobuto ; Shimizu, Toshimasa ; Hassanet, Sodabanlu ; Sugiyama, Masakazu ; Nakano, Yoshiaki

  • Author_Institution
    Corp. R&D Center, Toshiba Corp., Kawasaki
  • fYear
    2008
  • Firstpage
    597
  • Lastpage
    598
  • Abstract
    An AlN-based intersubband optical switch was fabricated with spot-size converter utilizing Si3N4 as a cladding layer. Intersubband absorption was observed at 1.48 mum. Absorption saturation by 5 dB was achieved with energy of 25 pJ.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; integrated optics; optical saturable absorption; optical switches; optical waveguides; wide band gap semiconductors; GaN-AlN; Si3N4; cladding layer; energy 25 pJ; integrated waveguide; intersubband absorption saturation; intersubband optical switch; spot-size converter; wavelength 1.48 mum; Absorption; Etching; Gallium nitride; Optical saturation; Optical switches; Optical waveguides; Propagation losses; Pulse modulation; Quantum well devices; Switching converters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688759
  • Filename
    4688759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1572931