DocumentCode
1573494
Title
Beyond-Si CMOS technologies based on high-mobility channels
Author
Ma, T.P.
Author_Institution
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fYear
2013
Firstpage
3
Lastpage
4
Abstract
For over 4 decades, the steady increase in switching speed of MOS transistors has been mainly achieved by scaling down the gate oxide thickness, the channel length, and other associated physical dimensions. In recent years, strain engineering to increase the carrier mobility has also been a significant contributor to the improved switching speed. These measures have been able to keep Si as the only semiconductor for high-density and high-performance CMOS technology.
Keywords
CMOS integrated circuits; MOSFET; carrier mobility; elemental semiconductors; silicon; MOS transistors; Si; beyond-Si CMOS technology; carrier mobility; channel length; gate oxide thickness; high-density CMOS technology; high-mobility channels; high-performance CMOS technology; physical dimensions; switching speed; CMOS integrated circuits; CMOS technology; III-V semiconductor materials; Logic gates; Silicon; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2013 71st Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4799-0811-0
Type
conf
DOI
10.1109/DRC.2013.6633766
Filename
6633766
Link To Document