Dual-gate MOSFETs on monolayer CVD MoS2 films

Monolayer MoS₂ with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications.[1-3] We have synthesized monolayer MoS₂ thin films via chemical vapor deposition (CVD) method on Si/SiO₂ substrate and comprehensively study the device performance and variation on dual-gated MoS₂ field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance on monolayer CVD MoS₂. We have achieved record high drain current of 62.5 mA/mm in CVD monolayer MoS₂ films ever reported.[4] We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS₂ with an expectation value of 175 Ω·mm, which can be significantly decreased to 10 Ω·mm by appropriate gating. By taking the impact of contact resistance into account, average and max intrinsic field-effect mobility is estimated to be 13.0 and 21.6 cm²/V·s in monolayer CVD MoS₂ films.