A 1.25-GBaud CMOS transceiver with on-chip terminator and voltage mode driver for Gigabit Ethernet 1000Base-X

Author

Ahn, Gijung ; Jeong, Deog-Kyoon

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

380

Lastpage

383

Abstract

This paper presents a 1.25-GBaud transceiver chip implemented with 0.35-μm CMOS technology, which can be used as an IEEE 802.32 Gigabit Ethernet 1000Base-X physical layer. A voltage mode driver and an on-chip termination circuit reduce signal distortion in the pseudo-ECL serial data stream in the presence of parasitic capacitance and inductance as well as reducing the number of external components. A differential voltage swing of output driver is 1400 mV and power consumption is 510 mW at 3.3 V supply under normal operation

Keywords

CMOS digital integrated circuits; driver circuits; high-speed integrated circuits; local area networks; transceivers; 0.35 micron; 3.3 V; 510 mW; CMOS transceiver; IEEE 802.32 Gigabit Ethernet 1000Base-X; differential voltage swing; on-chip terminator; parasitic capacitance; parasitic inductance; power consumption; pseudo-ECL serial data stream; signal distortion; voltage mode driver; CMOS technology; Distortion; Driver circuits; Energy consumption; Ethernet networks; Inductance; Parasitic capacitance; Physical layer; Transceivers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820937

Filename

820937