• DocumentCode
    15782
  • Title

    A W -Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

  • Author

    Teppati, Valeria ; Benedickter, Hansruedi ; Marti, Diego ; Garelli, Marco ; Tirelli, Stefano ; Lovblom, Rickard ; Fluckiger, Ralf ; Alexandrova, Maria ; Ostinelli, Olivier ; Bolognesi, C.R.

  • Author_Institution
    Millimeter-Wave Electron. (MWE) Group, ETH Zurich, Zürich, Switzerland
  • Volume
    62
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    148
  • Lastpage
    153
  • Abstract
    A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open-loop techniques in a cost-effective way: load reflection coefficients ΓL as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-terahertz frequencies, and W-band monolithic microwave integrated circuit design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-terahertz integrated circuits. First measurements performed on high-performance InP double heterojunction bipolar transistors and GaN high electron-mobility transistors are presented.
  • Keywords
    III-V semiconductors; MMIC frequency convertors; active networks; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit design; wide band gap semiconductors; GaN; HEMT; InP; MMIC characterization; Smith chart; W-band on-wafer active load-pull system; active open-loop techniques; double heterojunction bipolar transistors; down-conversion techniques; frequency 94 GHz; frequency conversion techniques; high electron-mobility transistors; large-signal device model verification; load-pull measurements; monolithic microwave integrated circuit design; passive tuners; sub-terahertz integrated circuits; technology assessment; Accuracy; Calibration; HEMTs; Millimeter wave measurements; Real-time systems; Transmission line measurements; Uncertainty; Active devices; active-device measurements; load–pull; nonlinear measurements; transistor measurement;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2013.2292042
  • Filename
    6679301