DocumentCode
1578873
Title
Flexible polishing surface (FPS) vs rigid polishing surface (RPS) in CMP: pros and cons
Author
Gotkis, Yehiel ; Wei, David ; Kistler, Rodney
Author_Institution
CMP/CLN Div., Lam Res. Corp., Fremont, CA, USA
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
27
Lastpage
32
Abstract
Two major conceptual CMP approaches, namely flexible polishing surface (utilized in linear belt CMP) and rigid polishing surface (hard platen rotary and orbital CMP) concepts are compared with regard to process stability, uniformity, planarization efficiency and other performance features. A new CMP characteristic, Normalized Removal Work, the amount of wafer layer material removed by a unit of active pad area (NRW=(Thickness removed)/(Active pad area), [A/sq. inch]), is used to analyze and compare the concepts. The NRW shows how much of the removed material is transferred and redeposited over a unit of pad area. It influences all aspects of the CMP process. Low NRW is good for CMP, high NRW is bad for CMP.
Keywords
chemical mechanical polishing; chemical-mechanical planarization; flexible polishing surface; hard platen rotary CMP; linear belt CMP; normalized removal work; orbital CMP; planarization efficiency; process stability; rigid polishing surface; uniformity; Belts; Degradation; Integrated circuit manufacture; Manufacturing; Planarization; Shape; Signal resolution; Slurries; Stability; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
Print_ISBN
0-7803-7158-5
Type
conf
DOI
10.1109/ASMC.2002.1001568
Filename
1001568
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