• DocumentCode
    1578873
  • Title

    Flexible polishing surface (FPS) vs rigid polishing surface (RPS) in CMP: pros and cons

  • Author

    Gotkis, Yehiel ; Wei, David ; Kistler, Rodney

  • Author_Institution
    CMP/CLN Div., Lam Res. Corp., Fremont, CA, USA
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    27
  • Lastpage
    32
  • Abstract
    Two major conceptual CMP approaches, namely flexible polishing surface (utilized in linear belt CMP) and rigid polishing surface (hard platen rotary and orbital CMP) concepts are compared with regard to process stability, uniformity, planarization efficiency and other performance features. A new CMP characteristic, Normalized Removal Work, the amount of wafer layer material removed by a unit of active pad area (NRW=(Thickness removed)/(Active pad area), [A/sq. inch]), is used to analyze and compare the concepts. The NRW shows how much of the removed material is transferred and redeposited over a unit of pad area. It influences all aspects of the CMP process. Low NRW is good for CMP, high NRW is bad for CMP.
  • Keywords
    chemical mechanical polishing; chemical-mechanical planarization; flexible polishing surface; hard platen rotary CMP; linear belt CMP; normalized removal work; orbital CMP; planarization efficiency; process stability; rigid polishing surface; uniformity; Belts; Degradation; Integrated circuit manufacture; Manufacturing; Planarization; Shape; Signal resolution; Slurries; Stability; Surface topography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
  • Print_ISBN
    0-7803-7158-5
  • Type

    conf

  • DOI
    10.1109/ASMC.2002.1001568
  • Filename
    1001568