DocumentCode
1579413
Title
Epi resistivity profiles without wafer damage
Author
Woolford, Karen ; Panczyk, Christopher ; Martel, Gregory
Author_Institution
SUMCO Phoenix Corp., Fremont, CA, USA
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
140
Lastpage
143
Abstract
Non-contact methods are now available to measure the resistivity of silicon epitaxy. The new technology offers wafer manufacturers the opportunity to significantly lower operating costs and increase reactor capacity by eliminating the need for monitor wafers. Our group investigated the Epimet Model 2 (SemiTest, Inc.) for monitoring epi wafer production. Our evaluation shows suitable measurement repeatability, reproducibility, and stability for the epi parts tested. Further, the Epimet significantly outperforms the Hg-probe CV in head-to-head measurement capability comparison. This paper focuses on the product-wafer integrity tests performed which demonstrated that the Epimet is indeed non-contaminating and non-damaging to wafers, allowing it to be used to monitor actual product wafers.
Keywords
electric resistance measurement; electrical resistivity; elemental semiconductors; process monitoring; semiconductor epitaxial layers; silicon; Epimet Model 2; Si; noncontact measurement; nondestructive metrology; product-wafer integrity test; production monitoring; resistivity profile; semiconductor manufacturing; silicon epitaxial wafer; wafer damage; Conductivity; Costs; Epitaxial growth; Inductors; Manufacturing; Monitoring; Semiconductor device modeling; Semiconductor process modeling; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
Print_ISBN
0-7803-7158-5
Type
conf
DOI
10.1109/ASMC.2002.1001590
Filename
1001590
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