• DocumentCode
    1579413
  • Title

    Epi resistivity profiles without wafer damage

  • Author

    Woolford, Karen ; Panczyk, Christopher ; Martel, Gregory

  • Author_Institution
    SUMCO Phoenix Corp., Fremont, CA, USA
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    140
  • Lastpage
    143
  • Abstract
    Non-contact methods are now available to measure the resistivity of silicon epitaxy. The new technology offers wafer manufacturers the opportunity to significantly lower operating costs and increase reactor capacity by eliminating the need for monitor wafers. Our group investigated the Epimet Model 2 (SemiTest, Inc.) for monitoring epi wafer production. Our evaluation shows suitable measurement repeatability, reproducibility, and stability for the epi parts tested. Further, the Epimet significantly outperforms the Hg-probe CV in head-to-head measurement capability comparison. This paper focuses on the product-wafer integrity tests performed which demonstrated that the Epimet is indeed non-contaminating and non-damaging to wafers, allowing it to be used to monitor actual product wafers.
  • Keywords
    electric resistance measurement; electrical resistivity; elemental semiconductors; process monitoring; semiconductor epitaxial layers; silicon; Epimet Model 2; Si; noncontact measurement; nondestructive metrology; product-wafer integrity test; production monitoring; resistivity profile; semiconductor manufacturing; silicon epitaxial wafer; wafer damage; Conductivity; Costs; Epitaxial growth; Inductors; Manufacturing; Monitoring; Semiconductor device modeling; Semiconductor process modeling; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
  • Print_ISBN
    0-7803-7158-5
  • Type

    conf

  • DOI
    10.1109/ASMC.2002.1001590
  • Filename
    1001590