DocumentCode
1580638
Title
Effect of Contact Impedance on the Head Electrical Properties Based on EIT Technology
Author
Yang, Shuo ; Xu, Guizhi ; Wang, Lei ; Li, Ying ; Wu, Huanli
Author_Institution
Key Lab. of Electromagn. Field & Electr. Apparatus Reliability of Hebei Province, Hebei Univ. of Technol., Tianjin
fYear
2006
Firstpage
5320
Lastpage
5323
Abstract
Electrical impedance tomography (EIT) is a noninvasive technique that permits estimation of resistivity within a subject by reconstructing from boundary measurements. The head electrical properties based on EIT technology have been studied by many authors and in most of this work the realistic head model has been considered without contact impedance between the electrodes and the scalp. It is interesting to evaluate the effect of contact impedance on surface potential distributions because the contact impedance and the current density through this contact impedance are both high. In this paper we describe a complete electrode realistic head model that takes into account the presence of the electrode-scalp contact impedance. Using the finite element method (FEM), we get the surface potential distribution curves whose amplitude and shape are affected evidently by the magnitude of the contact impedance. The complete electrode realistic head model can be used to improve the precision of the reconstructed images by EIT
Keywords
bioelectric potentials; biomedical electrodes; electric impedance imaging; finite element analysis; image reconstruction; medical image processing; EIT technology; FEM; current density; electrical impedance tomography; electrode-scalp contact impedance; finite element method; head electrical properties; image reconstruction; surface potential distributions; Conductivity; Contacts; Electric variables measurement; Electrodes; Head; Image reconstruction; Impedance measurement; Noninvasive treatment; Surface impedance; Tomography;
fLanguage
English
Publisher
ieee
Conference_Titel
Engineering in Medicine and Biology Society, 2005. IEEE-EMBS 2005. 27th Annual International Conference of the
Conference_Location
Shanghai
Print_ISBN
0-7803-8741-4
Type
conf
DOI
10.1109/IEMBS.2005.1615682
Filename
1615682
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