DocumentCode
1582098
Title
Press-pack IGBTs, semiconductor switches for pulse power
Author
Wakeman, F. ; Findlay, W. ; Gangru Li
Author_Institution
Westcode Semicond. Ltd., Chippenham, UK
Volume
2
fYear
2001
Firstpage
1051
Abstract
A range of pressure contact IGBTs with voltage ratings of 1.8 kV and 5 kV are introduced as suitable switches for pulse power applications. The electromechanical characteristics of the pressure contact IGBTs are compared to substrate mounted devices and some significant differences, which may offer an advantage in some pulse power applications, are identified. Initial test results conducted on three devices of different ratings, under short pulse high di/dt conditions, are reported.
Keywords
insulated gate bipolar transistors; power semiconductor switches; pulsed power switches; semiconductor device packaging; semiconductor device reliability; 1.8 kV; 5 kV; electromechanical characteristics; high reliability; mechanical design; press-pack IGBTs; pressure contact IGBTs; pulse power applications; short pulse high di/dt conditions; switching characteristics; Ceramics; Contacts; Equivalent circuits; Inductance; Insulated gate bipolar transistors; Packaging; Power semiconductor switches; Resistors; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Plasma Science, 2001. PPPS-2001. Digest of Technical Papers
Conference_Location
Las Vegas, NV, USA
Print_ISBN
0-7803-7120-8
Type
conf
DOI
10.1109/PPPS.2001.1001724
Filename
1001724
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