Ion implantation and transient enhanced diffusion

Experimental and theoretical studies are presented which help elucidate the mechanisms of transient enhanced diffusion of B in Si following ion implantation. The source of the Si self-interstitials, which mediate the enhanced B diffusion, has been identified as {113} defects and the diffusion flux has been directly measured. The Si self-interstitials can cause clustering of the B atoms. Carbon in Si will trap the diffusing flux and may be a practical way of retarding diffusion. A new atomistic approach to process simulation, based on a Monte Carlo diffusion code coupled to a binary collision program, explains the success of the “+1” model which has also been verified by defect counting measurements