DocumentCode
1583305
Title
Thermal analysis of high power modules
Author
Van Godbold, C. ; Sankaran, V. Anand ; Hudgins, L. Jerry
Author_Institution
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Issue
0
fYear
1995
Firstpage
140
Abstract
A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor stack types: direct bond copper (DBC), thick film printed substrate, and insulated metal substrate (IMS). DBC and thick film are thermally superior to IMS, but IMS shows potential. In addition, the effect of case-to-sink interface conductivity on heat flow is studied
Keywords
heat transfer; power transistors; semiconductor device models; thermal analysis; thermal conductivity; case-to-sink interface conductivity; direct bond copper; heat flow; insulated metal substrate; power modules; thermal analysis; thick film printed substrate; transistor stack; Costs; Heat sinks; Inductance; Minimization; Multichip modules; Semiconductor device packaging; Switches; Switching circuits; Temperature; Thick films;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1995. APEC '95. Conference Proceedings 1995., Tenth Annual
Conference_Location
Dallas, TX
Print_ISBN
0-7803-2482-X
Type
conf
DOI
10.1109/APEC.1995.469012
Filename
469012
Link To Document