High-efficiency dual-gate InGaAs pseudomorphic HEMTs for high-power amplifiers using single-voltage supply

Author

Ohbu, I. ; Tanimoto, T. ; Tanaka, S. ; Matsumoto, H. ; Terano, A. ; Kudo, M. ; Nakamura, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1995

Firstpage

189

Lastpage

192

Abstract

High-efficiency InGaAs pseudomorphic HEMTs for high-power amplifiers have been developed. To improve power-added efficiency, we developed a new type of dual-gate structure which consists of an enhancement-mode FET and a depletion-mode FET. A highly reliable platinum buried gate was adopted to obtain a Schottky barrier height of 0.8 eV for the enhancement-mode FET. The power-added efficiency of the new FETs is as much as 10% higher than that of single-gate FETs at 1.5 GHz, and +3 V single-voltage operation is possible

Keywords

III-V semiconductors; UHF field effect transistors; UHF power amplifiers; gallium arsenide; indium compounds; power HEMT; power field effect transistors; 0.8 eV; 1.5 GHz; 3 V; InGaAs; Pt; Pt buried gate; Schottky barrier height; depletion-mode FET; dual-gate structure; enhancement-mode FET; high-efficiency operation; high-power amplifiers; power-added efficiency; pseudomorphic HEMT; single-voltage supply; Batteries; FETs; Gallium arsenide; High power amplifiers; Impedance; Indium gallium arsenide; Knee; PHEMTs; Telephone sets; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.497211

Filename

497211